EMH2604 no.9006-1/6 features ? nch + pch mosfet ? on-resistance nch : r ds (on)1=34m (typ.) pch : r ds (on)1=65m (typ.) ? 1.8v drive ? halogen free compliance speci cations absolute maximum ratings at ta=25c parameter symbol conditions n-channel p-channel unit drain-to-source voltage v dss 20 --20 v gate-to-source voltage v gss 10 10 v drain current (dc) i d 4 --3 a drain current (pulse) i dp pw 10 s, duty cycle 1% 20 --20 a allowable power dissipation p d when mounted on ceramic substrate (900mm 2 0.8mm) 1unit 1.0 w total dissipation p t when mounted on ceramic substrate (900mm 2 0.8mm) 1.2 w channel temperature tch 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7045-002 ordering number : en9006 60111pe tkim tc-00002607 sanyo semiconductors data sheet EMH2604 n-channel and p-channel silicon mosfets general-purpose switching device applications http:// semicon.sanyo.com/en/network product & package information ? package : emh8 ? jeita, jedec : - ? minimum packing quantity : 3,000 pcs./reel packing type : tl marking electrical connection 1 : source1 2 : gate1 3 : source2 4 : gate2 5 : drain2 6 : drain2 7 : drain1 8 : drain1 sanyo : emh8 1 4 85 0.125 0. 2 0.2 2.1 1.7 0.5 2.0 0.2 0.75 0.05 8765 1234 tl fd lot no.
EMH2604 no.9006-2/6 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max [n-channel] drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0v 20 v zero-gate voltage drain current i dss v ds =20v, v gs =0v 1 a gate-to-source leakage current i gss v gs =8v, v ds =0v 10 a cutoff voltage v gs (off) v ds =10v, i d =1ma 0.4 1.3 v forward transfer admittance | yfs | v ds =10v, i d =2a 3.4 s static drain-to-source on-state resistance r ds (on)1 i d =4a, v gs =4.5v 34 45 m r ds (on)2 i d =1a, v gs =2.5v 49 67 m r ds (on)3 i d =0.5a, v gs =1.8v 74 115 m input capacitance ciss v ds =10v, f=1mhz 345 pf output capacitance coss v ds =10v, f=1mhz 67 pf reverse transfer capacitance crss v ds =10v, f=1mhz 52 pf turn-on delay time t d (on) see speci ed test circuit. 9.2 ns rise time t r see speci ed test circuit. 60 ns turn-off delay time t d (off) see speci ed test circuit. 30 ns fall time t f see speci ed test circuit. 38 ns total gate charge qg v ds =10v, v gs =4.5v, i d =4a 4.7 nc gate-to-source charge qgs v ds =10v, v gs =4.5v, i d =4a 0.65 nc gate-to-drain ?miller? charge qgd v ds =10v, v gs =4.5v, i d =4a 1.6 nc diode forward voltage v sd i s =4a, v gs =0v 0.8 1.2 v [p-channel] drain-to-source breakdown voltage v (br)dss i d =--1ma, v gs =0v --20 v zero-gate voltage drain current i dss v ds =--20v, v gs =0v --1 a gate-to-source leakage current i gss v gs =8v, v ds =0v 10 a cutoff voltage v gs (off) v ds =--10v, i d =--1ma --0.4 --1.3 v forward transfer admittance | yfs | v ds =--10v, i d =--1.5a 3.6 s static drain-to-source on-state resistance r ds (on)1 i d =--3a, v gs =--4.5v 65 85 m r ds (on)2 i d =--1a, v gs =--2.5v 98 137 m r ds (on)3 i d =--0.5a, v gs =--1.8v 155 235 m input capacitance ciss v ds =--10v, f=1mhz 320 pf output capacitance coss v ds =--10v, f=1mhz 66 pf reverse transfer capacitance crss v ds =--10v, f=1mhz 50 pf turn-on delay time t d (on) see speci ed test circuit. 7.1 ns rise time t r see speci ed test circuit. 21 ns turn-off delay time t d (off) see speci ed test circuit. 37 ns fall time t f see speci ed test circuit. 32 ns total gate charge qg v ds =--10v, v gs =--4.5v, i d =--3a 4.0 nc gate-to-source charge qgs v ds =--10v, v gs =--4.5v, i d =--3a 0.6 nc gate-to-drain ?miller? charge qgd v ds =--10v, v gs =--4.5v, i d =--3a 1.1 nc diode forward voltage v sd i s =--3a, v gs =0v --0.83 --1.2 v
EMH2604 no.9006-3/6 switching time test circuit [n-channel] [p-channel] pw=10 s d.c. 1% p. g 50 g s d i d =2a r l =5 v dd =10v v out v in 4.5v 0v v in EMH2604 pw=10 s d.c. 1% p. g 50 g s d i d = --1.5a r l =6.67 v dd = --10v v ou t v in 0v --4.5v v in EMH2604 [nch] [nch] [nch] [nch] gate-to-source voltage, v gs -- v r ds (on) -- v gs drain-to-source voltage, v ds -- v i d -- v ds drain current, i d -- a gate-to-source voltage, v gs -- v i d -- v gs drain current, i d -- a ambient temperature, ta -- c r ds (on) -- ta static drain-to-source on-state resistance, r ds (on) -- m static drain-to-source on-state resistance, r ds (on) -- m it13500 0 0 4.0 2.0 2.5 3.0 3.5 1.0 0.7 0.8 0.9 0.5 0.1 0.2 0.3 0.4 0.6 it13499 1.5 1.0 0.5 4.5v 1.5v v gs =1.2v 0 0 5.0 2.0 1.0 0.5 1.5 2.5 1.5 0.5 3.0 4.0 4.5 3.5 2.0 1.0 v ds =10v 25 c --25 c ta=75 c 2.0v 2.5v 8.0v 160 8 it13501 110 0 20 10 30 40 50 60 70 80 90 100 it13502 110 100 0 02467 135 ta=25 c i d =0.5a 4a --60 --40 --20 0 20 40 80 120 60 100 140 80 90 70 60 50 40 30 10 20 v gs =1.8v, i d =0.5a 1.8v 1a v gs =2.5v, i d =1a v gs =4.5v, i d =4a
EMH2604 no.9006-4/6 a s o drain-to-source voltage, v ds -- v drain current, i d -- a [nch] [nch] [nch] [nch] [nch] [pch] [pch] drain current, i d -- a sw time -- i d switching time, sw time -- ns ciss, coss, crss -- v ds drain current, i d -- a forward transfer admittance, | y fs | -- s | y fs | -- i d diode forward voltage, v sd -- v source current, i s -- a i s -- v sd drain-to-source voltage, v ds -- v ciss, coss, crss -- pf it13503 0.01 0.1 it13504 0.1 0.3 0.5 1.1 0.7 0.9 0.01 0.1 7 5 3 2 7 5 3 2 2 1.0 7 5 3 0.1 23 57 2 1.0 357 2357 1.0 7 5 3 2 7 5 3 2 v ds =10v ta= --25 c 75 c 25 c --25 c 25 c ta=75 c v gs =0v 0.01 0.1 23 5 7 2 1.0 10 35 77 2 3 10 7 5 2 2 3 5 2 3 100 7 5 it13505 046 21214 810 161820 2 7 5 3 7 5 it13506 100 1000 2 3 f=1mhz v dd =10v v gs =4.5v t d (off) t r t f t d (on) ciss crss coss 35 total gate charge, qg -- nc gate-to-source voltage, v gs -- v v gs -- qg 0 0 5.0 1.0 1.5 0.5 4.5 it13507 2.5 2.0 4.0 3.0 3.5 4.5 1.0 0.5 1.5 2.0 2.5 3.5 3.0 4.0 v ds =10v i d =4a i d -- v ds i d -- v gs drain current, i d -- a drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v 0 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 --0.2 --0.4 --0.6 --0.8 --1.0 --0.1 --0.3 --0.5 --0.7 --0.9 it14533 0 --1.0 --0.4 --0.6 --0.8 --0.2 --1.2 --1.8 --1.6 --1.4 --2.2 --2.0 0 --1.0 --0.5 --1.5 --2.0 --2.5 --3.0 --3.5 --5.0 --4.5 --4.0 - -25 c it14534 --2.5v --1.5v --1.8v --8v --4.5v ta=75 c v ds = --10v --10v 25 c v gs = --1.2v --3.5v it16454 2 2 3 5 7 0.1 2 3 5 7 1.0 0.01 0.01 0.1 57 23 2 1.0 57 32 10 100 57 7 3235 operation in this area is limited by r ds (on). 100 s 100ms dc operation 10ms 1ms 2 3 5 7 3 5 7 10 100 i dp =20a (pw 10 s) i d =4a [nch] ta=25 c single pulse when mounted on ceramic substrate (900mm 2 0.8mm)
EMH2604 no.9006-5/6 [pch] [pch] [pch] [pch] [pch] [pch] [pch] i s -- v sd drain current, i d -- a diode forward voltage, v sd -- v sw time -- i d ciss, coss, crss -- v ds switching time, sw time -- ns ciss, coss, crss -- pf drain current, i d -- a drain-to-source voltage, v ds -- v r ds (on) -- v gs r ds (on) -- ta static drain-to-source on-state resistance, r ds (on) -- m static drain-to-source on-state resistance, r ds (on) -- m gate-to-source voltage, v gs -- v ambient temperature, ta -- c source current, i s -- a | y fs | -- i d forward transfer admittance, | y fs | -- s it14537 it14538 --0.3 --0.4 --0.5 --0.7 --0.6 --0.8 --0.9 --1.0 --1.1 0.1 1.0 7 5 3 2 10 7 5 3 2 --0.1 --1.0 23 57 --0.01 23 57 23 57 ta= - -25 c v ds = --10v --0.01 2 3 --0.1 7 5 v gs =0v --0.01 --0.1 23 57 2 --1.0 --10 357 2 v dd = --10v v gs = --4.5v t d (on) t d (off) t f it14539 0 --6 --10 7 5 7 5 3 2 100 3 2 --14 --20 --18 --2 --4 --8 --12 --16 ciss coss crss it14540 10 2 3 7 2 5 3 3 5 100 2 7 5 ta=75 c 25 c --25 c f=1mhz 0 --2 --4 --6 --8 -- 1 -- 3 -- 5 -- 7 30 60 120 90 150 180 240 210 0 40 20 80 60 160 140 120 100 200 180 240 220 0 it14535 it14536 i d = --0.5a --3a ta=25 c --1a 75 c 25 c 2 3 --1.0 2 7 5 3 7 5 --60 --40 --20 0 20 40 60 80 100 120 140 160 v gs = --1.8v, i d = --0.5a v gs = --4.5v, i d = --3.0a v gs = --2.5v, i d = --1.0a 357 t r v gs -- qg total gate charge, qg -- nc gate-to-source voltage, v gs -- v a s o drain-to-source voltage, v ds -- v drain current, i d -- a 0 4.5 4.0 1.0 1.5 0.5 2.0 2.5 3.5 3.0 it14541 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 v ds = --10v i d = --3a [pch] it16455 2 2 3 5 7 --0.1 2 3 5 7 --1.0 --0.01 --0.01 --0.1 57 23 2 --1.0 57 32 --10 --100 57 7 3235 operation in this area is limited by r ds (on). 100 s 100ms dc operation 10ms 1ms 2 3 5 7 3 5 7 --10 --100 i dp = --20a (pw 10 s) i d = --3a ta=25 c single pulse when mounted on ceramic substrate (900mm 2 0.8mm)
EMH2604 no.9006-6/6 ps this catalog provides information as of june, 2011. speci cations and information herein are subject to change without notice. note on usage : since the EMH2604 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, av equipment, communication device, office equipment, industrial equipment etc.). the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. ambient temperature, ta -- c p d -- ta allowable power dissipation, p d -- w [nch/pch] it16456 0 0 20 40 0.4 60 80 100 120 140 160 0.8 1.2 0.2 0.6 1.0 1.4 1unit when mounted on ceramic substrate (900mm 2 0.8mm) total dissipation
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